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相变存储器(PCM)是一种极具发展前景的柔性电子存储技术，但传统PCM的研究大多基于刚性衬底，无法满足柔性化的需求。选择在柔性衬底聚酰亚胺(PI)上制备了碳(C)掺杂Sb_2Te3(C-Sb_2Te3/PI)相变薄膜及器件单元，并研究了弯曲对薄膜相变性能的影响。结果表明，C-Sb_2Te3/PI薄膜在未弯曲及弯曲1 000、5 000和10 000次后仍能完成相变过程且高低阻值稳定，具有良好的抗弯曲性能。多次弯曲未对薄膜的晶体结构和微观形貌产生影响。使用光刻工艺制备的C-Sb_2Te3器件单元具有较快的相变速度(10 ns)和良好的循环特性(103次左右)。因此，C-Sb_2Te3/PI在柔性存储器领域表现出应用潜力。
Abstract：Phase change memory(PCM) has emerged as a promising candidate for flexible electronic storage technology. Nevertheless, conventional PCM research is predominantly based on rigid substrates, which does not satisfy the requirements for flexibility. To overcome this constraint, carbon(C)-doped Sb_2Te3(C-Sb_2Te3) phase change thin films and device units were fabricated on a flexible polyimide(PI) substrate(C-Sb_2Te3/PI), and the impact of mechanical bending on their phase change properties was systematically investigated. Remarkably, the C-Sb_2Te3/PI films maintain stable phase change capabilities and preserve distinguishable resistance states even after undergoing 1 000, 5 000, and 10 000 bending cycles, demonstrating exceptional bending resistance. The crystal structure and microstructure of the films remained unaffected by multiple bending cycles. Device units based on C-Sb_2Te3, fabricated using a lithographic process, exhibit a rapid phase change time of 10 ns and reliable cycling characteristics of approximately 103 cycles. These findings highlight the potential of C-Sb_2Te3/PI for applications in flexible memory technologies.
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基本信息:
DOI：10.19886/j.cnki.dhdz.2025.0044
中图分类号:TB383.2;TP333
引用信息:
[1]潘晨杰,高士伟,吴良才.C掺Sb_2Te_3相变薄膜在柔性衬底PI上的性能研究[J].东华大学学报(自然科学版),2026,52(01):105-111.DOI:10.19886/j.cnki.dhdz.2025.0044.
基金信息:
上海市自然科学基金(22ZR1402200); 集成电路材料全国重点实验室开放基金(NKLJC-K2023-08)